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InGaN-Based Multi-Quantum-Well-Structure Laser Diodes
|
2014-01-17 |
405 |
|
Effect of Slight Misorientation of Sapphire Substrate on Metalorganic Chemical Vapor Deposition Growth of GaN
|
2014-01-16 |
336 |
|
The Role of Inner And Internal Radiation on the Melt Growth of Sapphire Crystal
|
2014-01-16 |
292 |
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Epitaxial Aluminum-Doped Zinc Oxide Thin Films on Sapphire: I, Effect of Substrate Orientation
|
2014-01-15 |
314 |
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Highly A-Axis Oriented γ-LiAlO2 Layer on A-Plane Sapphire Fabricated by Vapor Transport Equilibration
|
2014-01-15 |
295 |
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Damage-Free Separation of GaN Thin Films from Sapphire Substrates
|
2014-01-14 |
328 |
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Nitridation Process of And Sapphire Substrate Surface Effect on The Growth of GaN
|
2014-01-13 |
339 |
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Diameter Controlling Method of Large Size Sapphire Single Crystal Grown by Kyropoulos Method
|
2014-01-13 |
469 |
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Epitaxial Neodymium-Doped Sapphire Films, a New Active Medium for Waveguide Lasers
|
2014-01-10 |
306 |
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Gas Bubbles in Shaped Sapphire
|
2014-01-10 |
312 |