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InGaN-Based Multi-Quantum-Well-Structure Laser Diodes
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2014-01-17 |
461 |
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Effect of Slight Misorientation of Sapphire Substrate on Metalorganic Chemical Vapor Deposition Growth of GaN
|
2014-01-16 |
387 |
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The Role of Inner And Internal Radiation on the Melt Growth of Sapphire Crystal
|
2014-01-16 |
336 |
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Epitaxial Aluminum-Doped Zinc Oxide Thin Films on Sapphire: I, Effect of Substrate Orientation
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2014-01-15 |
358 |
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Highly A-Axis Oriented γ-LiAlO2 Layer on A-Plane Sapphire Fabricated by Vapor Transport Equilibration
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2014-01-15 |
342 |
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Damage-Free Separation of GaN Thin Films from Sapphire Substrates
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2014-01-14 |
367 |
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Nitridation Process of And Sapphire Substrate Surface Effect on The Growth of GaN
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2014-01-13 |
372 |
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Diameter Controlling Method of Large Size Sapphire Single Crystal Grown by Kyropoulos Method
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2014-01-13 |
513 |
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Epitaxial Neodymium-Doped Sapphire Films, a New Active Medium for Waveguide Lasers
|
2014-01-10 |
359 |
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Gas Bubbles in Shaped Sapphire
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2014-01-10 |
363 |