InGaN-Based Multi-Quantum-Well-Structure Laser Diodes
|
2014-01-17 |
353 |
Effect of Slight Misorientation of Sapphire Substrate on Metalorganic Chemical Vapor Deposition Growth of GaN
|
2014-01-16 |
281 |
The Role of Inner And Internal Radiation on the Melt Growth of Sapphire Crystal
|
2014-01-16 |
239 |
Epitaxial Aluminum-Doped Zinc Oxide Thin Films on Sapphire: I, Effect of Substrate Orientation
|
2014-01-15 |
264 |
Highly A-Axis Oriented γ-LiAlO2 Layer on A-Plane Sapphire Fabricated by Vapor Transport Equilibration
|
2014-01-15 |
248 |
Damage-Free Separation of GaN Thin Films from Sapphire Substrates
|
2014-01-14 |
285 |
Nitridation Process of And Sapphire Substrate Surface Effect on The Growth of GaN
|
2014-01-13 |
296 |
Diameter Controlling Method of Large Size Sapphire Single Crystal Grown by Kyropoulos Method
|
2014-01-13 |
424 |
Epitaxial Neodymium-Doped Sapphire Films, a New Active Medium for Waveguide Lasers
|
2014-01-10 |
256 |
Gas Bubbles in Shaped Sapphire
|
2014-01-10 |
263 |