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The Role of Inner And Internal Radiation on the Melt Growth of Sapphire Crystal

For an inductively heated Czochralski furnace used to grow sapphire single crystal, influence of the inner (wall-to-wall) and crystal internal (bulk) radiation on the characteristics of the growth process such as temperature and flow fields, structure of heat transfer and crystal-melt interface has been studied numerically using the 2D quasi-steady state finite element method. The obtained results of global analysis demonstrate a strong dependence of thermal field, heat transport structure and crystal-melt interface on both types of radiative heat transfer within the growth furnace.

Bi‐Ti‐O oxide thin films were prepared on a sapphire single‐crystal substrate by electron cyclotron resonance (ECR) plasma sputtering. The target used was a sintered Bi4Ti3O12(BIT) and the substrate was controlled in the temperature range 400–640 °C(Tsub). The film sputtered at Tsub=400 °C was a pyrochlore type oxide(Bi2Ti2O7), which changed to a Bi4Ti3O12 oxide in the polycrystalline state at 500 °C and in the single crystalline state at 640 °C. In the film sputtered at 640 °C, the plane of the Bi4Ti3O12 grew parallel to the planes of the sapphire substrate, and the plane of Bi4Ti3O12 grew parallel to the plane of th sapphire subestrate. The deposition rate was about 200 Å/min independent of the sputtering conditions.


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