Highly A-Axis Oriented γ-LiAlO2 Layer on A-Plane Sapphire Fabricated by Vapor Transport Equilibration
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- Category: Molybdenum & Sapphire Growth Furnace News
- Published on 15 January 2014
- Written by Cloudy
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A single-phase γ-LiAlO2 layer with a highly-preferred orientation on equation image sapphire substrate is 
successfully fabricated by vapor transport equilibration (VTE) technique in Li-rich ambient. The VTE treatment temperature is essential to obtaining the high-quality layer of γ-LiAlO2, and the optimized temperature is about 1050 °C in the present work. It is promising to fabricate the γ-LIAlO2//sapphire equation image composite substrate for GaN-based epitaxial film.
The atomically ultrasmooth surfaces with atomic steps of sapphire substrates were obtained by annealing in air at temperatures between 1000 and 1400 °C. The terrace width and atomic step height of the ultrasmooth surfaces were controlled on an atomic scale by changing the annealing conditions and the crystallographic surface of substrates. The obtained ultrasmooth surface was stable in air. The topmost atomic structure of the terrace was examined quantitatively by atomic force microscopy and ion scattering spectroscopy as well as a theoretical approach using molecular dynamics simulations.
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