Epitaxial Neodymium-Doped Sapphire Films, a New Active Medium for Waveguide Lasers
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- Category: Molybdenum & Sapphire Growth Furnace News
- Published on 10 January 2014
- Written by Cloudy
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Epitaxial films of neodymium-doped sapphire have been grown by molecular beam epitaxy on R-, A-, and 
M-plane sapphire substrates. The emission spectrum features sharp lines consistent with single-site doping of the ion into the host crystal. This material is believed to be a nonequilibrium phase, inaccessible by conventional high-temperature growth methods. Neodymium-doped sapphire has a promising lasing line at with an emission cross section of , similar to the line of .
New high performance optical systems require highly durable, broadband window materials in larger sizes than are currently available. To meet this need, a low cost edge-bonding process was developed for producing large area sapphire windows from smaller, melt-grown blanks. The method uses a polycrystalline alumina interlayer to promote diffusion and single crystal conversion at the interface between two sapphire substrates and produce high strength bonds. The goal of the current research effort is to determine the optimal alumina composition for maximum bond strength.
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