Epitaxial Growth of Aluminum Nitride on Sapphire Using Metalorganic Chemical Vapor Deposition
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- Category: Molybdenum & Sapphire Growth Furnace News
- Published on 24 January 2014
- Written by Cloudy
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Epitaxial aluminum nitride (AlN) films were grown on the basal planes of sapphire substrates using 
metalorganic chemical vapor deposition (MO-CVD), and the following results were obtained. (1) The substrate temperature and the trimethylaluminum (TMA) concentration dependences of the growth rate suggested that the growth process is limited by mass transport. (2) The crystalline perfection of epitaxial films is strongly affected not only by the substrate temperature but also by the gas flow pattern. (3) Single-crystal AlN films which include no misoriented grains can be grown epitaxially at ∼1200°C under carefully-controlled gas flow patterns. (4) Crystalline imperfection is caused mainly by-oriented grains which correspond to the hillocks observed in the surface morphology.
The crystalline structure near the substrate interface has been studied for AlGaN films grown on sapphire substrates by metalorganic chemical vapor deposition, using AlN buffer layers. Transmission electron lattice images show that the sapphire/AlN interface is coherent, with misfit dislocations separated by 2.0 nm, corresponding to relaxed bulk lattice parameters. The interface between the buffer layer and the AlGaN film is discussed. The defect structure of the epilayer near the substrate interface consists mostly of dislocations and stacking faults lying on basal planes.
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