Influence of Buffer Layers on The Deposition of High Quality Single Crystal GaN over Sapphire Substrates
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- Category: Molybdenum & Sapphire Growth Furnace News
- Published on 24 January 2014
- Written by Cloudy
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Several research groups have recently reported a high quality single crystal gallium nitride layer deposited on a 
sapphire substrate , a key is used to obtain high-quality thin sapphire substrate and the grown aluminum nitride film , or between GaN buffer layer. In this communication , we discuss the buffer layer and the crystallinity of the crystalline control , optical , and influence the electrical properties of the deposited GaN . We also compared the use of gallium nitride and aluminum nitride as the buffer layer material. Our results show that the total thickness of the buffer layer and the film thickness is a key factor to control the deposition of gallium nitride over the electrical, optical and crystalline nature of the sapphire substrate.
Ball -doped GaN on sapphire substrate epitaxial layer surface deformation studied sharp diamond ( the Berkovich triangular pyramid ) nanoindentation and 5 micron radius tipped diamond. We found a " pop " in all the samples the load - displacement curve of the lower portion of the load , and the average shear stress is dependent on the film thickness. We also calculated on a sapphire substrate " true hardness" of gallium nitride , and compared with the results of InGaN on sapphire .
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