A Study of Semi-Insulating GaN Grown on AlN Buffer/Sapphire Substrate by Metalorganic Chemical Vapor Deposition
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- Category: Molybdenum & Sapphire Growth Furnace News
- Published on 26 January 2014
- Written by Cloudy
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We report the remarkably improved crystal quality of semi-insulating GaN grown by metalorganic chemical 
vapor deposition on an AlN buffer layer, which is deposited on sapphire substrate. The electrical and structural properties are characterized by dark current–voltage transmission line model and X-ray diffraction measurements. It is found that the crystal quality of the GaN epilayer is strongly related with the growth temperature of the decreased-temperature GaN interlayer. In comparison with the normal GaN grown on sapphire, the crystal quality is remarkably improved along with a semi-insulating electrical character. The high-mobility field effect transistors device based on the semi-insulating GaN shows good pinch off properties. Our electrical measurement results of GaN grown directly on an AlN buffer indicated that the as-grown-undoped GaN is naturally semi-insulating material. The origination of the residual donors in normal GaN grown on sapphire substrate is also discussed.
A high-quality thin GaN layer with an atomically flat surface has been successfully grown on a precisely offset-angle-controlled sapphire substrate by metal-organic vapor phase epitaxy. The insertion of an AlGaN layer between the underlying AlN layer and the GaN layer was found to improve the crystalline quality of the upper GaN layer.
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