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Heteroepitaxial Growth and The Effect of Strain on The Luminescent Properties of GaN Films on Sapphire Substrates

GaN films grown on sapphire substrates are characterized by X-ray Bond's method and the low temperature photoluminescence measurement. The GaN films are found to be strained by the biaxial compressive stress. From the measured strain and the shift of PL peak energy, the deformation potential of GaN (the relation between the strain parallel to the c-axis and the band gap energy) is found to be 12 eV. The origin of this compressive stress is discussed.

Metalorganic chemical vapor deposition (MOCVD) growth of AlN on sapphire substrates was investigated, with the aim of device quality AlN/GaN/AlN double heterostructures. Growth temperature as high as 1300° C was required to obtain AlN epitaxial layers with sharp X-ray diffraction peaks. By growing AlN at the high growth temperature, residual stress at the heterointerface was effectively reduced. The AlN epitaxial layers with smooth surfaces were grown using a low V/III ratio together with the high growth temperature. AlN/GaN/AlN double heterostructures with appropriate layer thicknesses for DH lasers and flat heterointerfaces were grown on sapphire substrates.


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