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Luminescence of Epitaxial GaN Laterally Overgrown on Sapphire Substrate: Spectroscopic Characterization And Dislocation Contrasts

Photoluminescence and cathodoluminescence spectra are recorded on epitaxial GaN laterally overgrown on sapphire. Photon recycling, which influences the position of the near band edge transition, is evidenced in cathodoluminescence (CL) spectra by changing the accelerating voltage. CL monochromatic images recorded at different wavelengths show that dislocations act as efficient nonradiative recombination centers, and that they are not responsible for the yellow band.

Indium–gallium nitride (InGaN) multiple-quantum-well (MQW) light-emitting diode (LED) membranes, prefabricated on sapphire growth substrates, were created using pulsed-excimer laser processing. The thin-film InGaN MQW LED structures, grown on sapphire substrates, were first bonded onto a Si support substrate with an ethyl cyanoacrylate-based adhesive. A single 600 mJ/cm2, 38 ns KrF (248 nm) excimer laser pulse was directed through the transparent sapphire, followed by a low-temperature heat treatment to remove the substrate. Free-standing InGaN LED membranes were then fabricated by immersing the InGaN LED/adhesive/Si structure in acetone to release the device from the supporting Si substrate. The current–voltage characteristics and room-temperature emission spectrum of the LEDs before and after laser lift-off were unchanged.


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