ZnO Ultraviolet Photodetectors Grown Via Thermal Oxidation of Zn-metal on Glass And Sapphire Substrates
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- Category: Molybdenum & Sapphire Growth Furnace News
- Published on 07 January 2014
- Written by Cloudy
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We have investigated the optical and structural properties of polycrystalline zinc oxide (ZnO) films grown on 
glass and c-plane sapphire substrates. Zinc-metal films where grown on glass and sapphire substrates via dc-sputter deposition at room temperature with subsequent thermal annealing in air at 300° and 600°C. X-ray diffraction spectra indicate that after annealing, the resulting ZnO films possess a polycrystalline hexagonal wurtzite structure without a preferred orientation. Room-temperature photoluminescence (PL) spectra indicate that films annealed at 300°C exhibited the strongest ultraviolet (UV) emission intensity and lowest deep-level emission. Increasing deep-level green emission was observed with increasing annealing temperature for films grown on glass substrates, and a red shift in the excitonic UV band was observed for films grown on sapphire substrates. ZnO-based metal-semiconductor-metal (MSM) UV photodetectors where fabricated via sputter deposition of aluminum ohmic contacts on the resulting ZnO films. Decreasing photocurrent is seen for increasing annealing temperature, which is consistent with PL studies.
In this work the results of high pressure solution growth of GaN on various patterned substrates are presented. The growth on GaN/sapphire substrates patterned in GaN parallel stripes and with SixNy and Mo masks between stripes is studied and analyzed. The results are compared with the growth on patterned substrates without any mask, thus with a bare sapphire between stripes. The usefulness of tungsten and iridium for masking is also determined. The HVPE free standing GaN substrates with high stripes, up to 10 mm, are examined in details. The stripes growth modes are shown and described.
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