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Controlled Growth And Surface Morphology Evolution of M-Oriented GaN Faceted-Domains on SiO2-Patterned M-Plane Sapphire Substrates

GaN nanodimensional structures have been realized on sapphire substrates by suitable surface treatment procedure using ferrous salt. Growth has been carried out at the substrate temperature of 950 °C. A separate synthesis boat was kept close to the growth substrate and the reaction of Ga to GaN was made in the close proximity of the substrate. Experiments were carried out at different growth temperatures and also by varying the proximity conditions of the substrate. The surface features reveal excellent distribution of nanostructures which are correlated with the growth conditions.

Oriented GaN faceted-domains were grown on -patterned -plane sapphire substrates with no low-temperature-grown buffer layers, and their surface morphology evolution was investigated. The preferred crystallographic orientations of GaN domains are found to be sensitively influenced by substrate temperature. The growth rate of -oriented GaN faceted-domains along the -direction is found to be significantly suppressed after filling up the circular-shaped window regions. Our simple model calculation reveals that this can be explained by the minimization of surface energy increment per volume increment, and that the growth along the -direction is energetically not favored until the domain reaches a critical size.


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