Changing The Orientation of The Main Surface of The Sapphire Substrate Experiment
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- Category: Molybdenum & Sapphire Growth Furnace News
- Published on 18 December 2013
- Written by Cloudy
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The experiments changed the orientation of a principal plane of the sapphire substrate, had gallium nitride 
based compound semiconductors grown epitaxially on the substrate, cleaved the grown layer in a plurality of directions and examined the precision of the cleavage planes. As it turned out, cleavage planes of good precision were obtained when gallium nitride based semiconductors compound were grown epitaxially on the surface a of the sapphire substrate, with the grown semiconductor layers being subsequently cleaved parallel to the direction of c axis of the substrate.
The experiments has been accomplished under these circumstances and has as an object providing a group III nitride based compound semiconductor laser diode in which both end faces of the laser cavity were sufficiently improved in the degree of parallelism and surface precision to assure a higher efficiency in laser oscillation.
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