Sapphire Substrate Made of A Laser Diode
- Details
- Category: Molybdenum & Sapphire Growth Furnace News
- Published on 18 December 2013
- Written by Cloudy
- Hits: 267
Laser diode is fabricated by epitaxial growth of a gallium nitride base compound semiconductor on a sapphire 
substrate. For the manufacture of reliable laser diodes, it is necessary to provide precise mirror surfaces; however, no one has ever succeeded in finding the directions of cleavage capable of providing precise mirror surfaces.
Furthermore, these lasers require that not only the III nitride compound semiconductor laser element layer but also the sapphire substrate should be cleaved to provide cleavage planes in the laser element layer. However, it is difficult to cleave the sapphire substrate per se; additionally, the 30° offset between the A axis of sapphire and that of the III nitride compound semiconductor makes it impossible to create cleavage surfaces of high quality in the III nitride compound semiconductor laser element layer.
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