A Method for Manufacturing a Group III Nitride Semiconductor Laser Quench
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- Category: Molybdenum & Sapphire Growth Furnace News
- Published on 19 December 2013
- Written by Cloudy
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The method for manufacturing a III nitride semiconductor laser comprising the steps of:
Forming an intermediate layer of zinc oxide (ZnO) in one region over a sapphire substrate and an intermediate layer of aluminum nitride (AlN) in the other region;
Forming a semiconductor laser element layer made of a plurality of sub-layers of a group III nitride compound semiconductor (AlxGayIn1-x-yN; including the cases of x=0, y=0 and x=y=0) over the intermediate layers;
removing only the intermediate layer of zinc oxide (ZnO) by wet etching with a ZnO-selective liquid etchant so as to form gaps between said sapphire substrate and the bottommost sublayer of said semiconductor laser element layer; andcleaving said semiconductor laser element layer with the aid of said gaps, with the resulting planes of cleavage being used as the mirror surfaces of the laser cavity.
Zinc oxide (ZnO) and AlN have lattice constants close to those of Group III nitride compound semiconductors (AlxGayIn1-x-yN; including the cases of x=0, y=0 and x=y=0) and both substances will make buffer layers which aid in the grown of Group III nitride compound semiconductors of high quality over the sapphire substrate. By etching away only the intermediate layer of zinc oxide (ZnO), one can form gaps between the sapphire substrate and the III nitride compound semiconductor laser element layer in the etched area. These gaps may be used as a guide for selective cleaving of the group III nitride compound semiconductor laser element layer, thereby creating mirror surfaces of sufficiently high quality to permit the formation of a reliable laser cavity. This in turn contributes to a marked improvement in the output power of the laser element.
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