Synthesis of Single Crystalline Experiment GaN Nanoribbons on Sapphire Substrates Results
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- Category: Molybdenum & Sapphire Growth Furnace News
- Published on 17 December 2013
- Written by Cloudy
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SEM images of the synthesized products are observed in Fig. The observations reveal that the surface of 
sapphire substrate consists of a large quantity wire-like GaN nanostructures with typical lengths in the range of several to several 10 μm; some of them have lengths of over 100 μm. Fig shows the morphology of GaN nanoribbons in the same area at a bigger magnification. The typical thickness and width-to-thickness of the grown GaN nanoribbons are in the range of 8–15 nm and ∼5–10, respectively, as determined from a number of GaN nanoribbons. EDX analysis of the nanoribbons indicates that the synthesized nanoribbons are composed of Ga and N with a ratio of ∼1:1, corresponding to the chemical composition of GaN.
A high magnification TEM image in Fig. It shows that the width of an individual GaN nanoribbion is in the general vicinity 100 nm, which is very flat and smooth on the surface. Analysis of a large quantity of GaN nanoribbons shows the ribbon-like nanostructures have uniform width and thickness along their length in the main.
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