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Synthesis of Single Crystalline Experiment GaN Nanoribbons on Sapphire Substrates

GaN nanoribbons were synthesized with a two-step growth technology. First, the Ga2O3 thin films with a thickness of ∼500 nm were deposited on the cleaned sapphire using a JCK-500A r.f. magnetron sputtering system. The sapphire substrates were cleaned using acetone, isopropyl alcohol, and deionized water before the deposition. The background pressure of the sputtering chamber was at about 5×10−4 Pa and the gas with a ratio of Ar:N2=10:1 under 1 Pa pressure was introduced into the chamber during the sputtering process. The purity of both Ar and N2 was 99.999%. The target was Ga2O3 (99.999%) and the distance between the target and the substrates was 80 mm. The r.f. and power of the sputtering were 13.56 MHz and 150 W, respectively.

In the second step, the sputtered Ga2O3 film samples were nitrided in a L4513II-2/QWZ open tube furnace. Fig. 1 schematically shows the experimental oven for the growth of nanoribbons. When the tube was heated to the equilibrium temperature of 1000 °C, high purity NH3 (99.999%) with a flow rate of 300 ml/min was introduced into the tube before the Ga2O3 thin films were inserted into the tube. The nitriding was carried out for 10 min. Then the power of the furnace was switched off, and the furnace was allowed to cool down to room temperature naturally in the absence of flowing ammonia. At last the samples were taken out from the furnace for characterization.


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