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Improved Electrical And Optical Properties of Aluminum Nitride Thin Film Coated with A Sapphire Substrate

By the reaction of molecular beam epitaxy on the electrical and optical properties of AlN epitaxial GaN sapphire coating films were studied. GaN films on AlN epitaxial film has a large hole mobility and show a more intense light emission peak at 360 nm cathode than the wavelength of the GaN film directly on the sapphire , which indicates that the crystal quality of the GaN film by using aluminum nitride as improved coating sapphire growth substrate. Small difference in lattice-matched thermal expansion coefficients between the GaN and AlN , and is thought to cause improvement.

Epitaxially grown by chemical vapor deposition system sapphire , using the reaction of zinc vapor and carbon dioxide , zinc oxide thin films were investigated. Growth rates of up to 30 microns / hour 700-750 ℃, the substrate temperature can be achieved. Growth in thin film substrates presputtered layer has a smooth surface and improve the integrity of the crystal is determined by scanning electron microscopy , reflection electron diffraction , and acoustic assessment. Film having a high resistivity , and ultimately reduce exposure to the atmosphere . Lithium diffusion interdigital surface acoustic wave transducers on the film preparation , and the electromechanical coupling factor of 1.39% , the film thickness was measured with a wavelength ratio of 0.13 .


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