Aluminum Nitride Thin Film Morphology And Surface Acoustic Wave Measurement on Sapphire

Aluminum nitride epitaxial films have been grown on R-plane sapphire substrate, and studied its piezoelectric properties, suitable for the application of surface acoustic wave devices. Reported here sapphire substrate The film is made of the reaction of trimethylaluminum with ammonia gas in the presence of hydrogen involves the use of improved epireactor grown as a growth furnace gas injection system in a chemical vapor deposition process, a temperature of about 1200 ℃, indicating that the gas flow to the substrate , the growth rate of 500 Å / min to achieve a thickness of 10 microns produced films which exhibit excellent mechanical and chemical stability. R plane, Al and O and repeat O-Al-O bond, Al-O bond consisting of alternating layers of sapphire. In two different layers of atoms, Al atoms in the close-packed structure, and oxygen atoms are aligned to the column  direction.Direction of the hexagonal wurtzite structure of AlN having a close-packed plane of Al and N atoms coplanar but separated into columns aligned. When the column direction of the sapphire and AlN line atoms (i.e., in the same direction with the projection of the sapphire c-axis direction of the AlN point C to obtain both the alignment axis in the plane R good fit plane), and given 2.7%、11.9% along a direction across the lattice mismatch.


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