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Growth of High-Quality,uniform C-Axis-Oriented Zinc Oxide Nano-Wires on A-Plane Sapphire Substrate with Zinc Oxide Templates

High-quality, vertically aligned zinc oxide (ZnO) nano-wires were grown by the vapour-transport method on (1 1 2¯ 0) (a-plane) sapphire substrate covered by a uniform ZnO nano-crystalline seed layer which was deposited in a preceding growth step via simple chemical vapour deposition. A thin layer of close-packed nano-seeds with an average size of 12 nm was formed rapidly on the substrate by sublimation and thermal decomposition of zinc acetate dihydrate as the precursor at moderate temperatures and pressures. Subsequently, growth of ZnO nano-wires was performed by a carbo-thermal vapour-transport method yielding nano-wires with high reproducibility and homogeneity. The as-grown, c-axis-oriented nano-wires exhibit excellent luminescence properties and perfect alignment with respect to the substrate surface.

Thin films of BN were prepared by chemical vapour deposition onto fused silica and sapphire using the reaction of BCl3 with NH3. The temperature of the substrate was varied between 600 and 1100°C. Transparent and smooth films of BN were obtained on fused silica and sapphire at substrate temperatures of 1000–1100°C. The growth rate of the film on sapphire was about 1 μm h−1, and the growth rate on fused silica was about one-half that on sapphire. The films were chemically inert and adherent to the substrate. The absorption of the BN film was measured at room temperature. In the near-UV region, the main absorption peak was at about 6.2 eV and a sharp drop occurred near 5.8 eV. The sharp drop is attributed to the direct band gap. The photoluminescence of the films was measured at room temperature by excitation with light of wavelength 254 nm. A broad emission with a peak near 360 nm was observed.


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