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Single Crystal Sapphire

Single crystal sapphire has a unique combination of physical, chemical and optical properties allowing it to withstand high temperatures, high pressure, thermal shock, and water or sand erosion. It is chemically inert, with a low friction coefficient, and excellent electrical, optical, and dielectric characteristics. In addition, its radiation resistance makes it an excellent material for use in optical windows for space applications.

Thick GaN layers were grown by hydride vapor phase epitaxy (HVPE) with the aim of using these layers as a homoepitaxial substrate to improve device quality of laser diodes or light emitting diodes. HVPE is very useful for thick layer growth since the growth rate can reach from several ten up to one hundred micron per hour. In this experiment, the growth began as selective growth through openings formed in a SiO2 mask. Facets consisting of planes were formed in the early stage and a continuous film developed from the coalescence of these facets on the SiO2 mask. As a result, GaN layers with a dislocation density as low as 6×107 cm^-2 were grown on 2-inch-diameter sapphire wafers. These GaN layers were crack-free and had mirror-like surface.


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