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Morphology of The Surface of Modified AlN/Sapphire Substrates Obtained by Thermochemical Nitridation Method

The study was performed on sapphire substrates with a diameter of 50.8mm with the crystallographic orientation and a deviation angle of 3–9′. The substrate surface underwent chemico-mechanical polishing. The substrates were annealed at 1450°С. For reducing annealing there was used a mixture of Ar, СО, H2 gases (0.1–0.12MPa, Ar and N2 concentrations were ~ 99vol.%, ~ 0.1–0.4vol.%, respectively). Nitridization was realized in a mixture of N2, СО, Н2 gases (0.1–0.12MPa, ~ 99vol.% concentration of N2.

The surface morphology was investigated on an atomic-force microscope Solver 47 Pro (NT-MDT) in contact mode. After chemico-mechanical polishing the initial surface of the substrates had a surface with terraces and steps, the step width ranged between 30 and 140nm. Such a nanostructured lay may be formed on extremely smooth sapphire surface at low angles of inclination to the crystallographic plane. The roughness Ra was 0.2–0.4nm.


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