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Piezoelectric Properties of ZnO Films on A Sapphire Substrate Deposited by an RF-Magnetron-Mode ECR Sputtering System

Compared to conventional RF magnetron sputtering systems, electron cyclotron resonance (ECR) sputtering systems are characterized by the ability to generate high-density plasma under low gas pressure.R-plane oriented epitaxial ZnO films were deposited on an R-plane sapphire substrate using the RF-magnetron-mode ECR sputtering equipment. As the results of the measurement, the films showed a good orientation and excellent effective electromechanical coupling factors (keff) for the Rayleigh surface acoustic wave (SAW) and its high-order SAW waves. These coupling factors were equal to or higher than the theoretical values keff obtained by the finite element method (FEM) analysis using a single crystal material constant.

Sb homojunction light emitting diode was fabricated on c-plane sapphire by metal–organic chemical vapour deposition (MOCVD). The p-type ZnO layer with a hole concentration of 1.27 × 1017 cm−3 was fabricated using trimethylantimony (TMSb) as the Sb doping source. The current–voltage characteristics of the device exhibited a desirable rectifying behaviour with a turn-on voltage of 3.3 V. Distinct electroluminescence with ultraviolet and visible emissions was detected from this device under forward bias at room temperature. Moreover, metal–organic source TMSb is an effective and controllable dopant in the MOCVD technique, which is suitable for further industrialized production.


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