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Gas Source Molecular Beam Epitaxy Growth of GaN on C-,A-,R- And M-Plane Sapphire And Silica Glass Substrates

A direct comparison of the physical properties of GaN thin films is made as a function of the choice of substrate orientations. Gallium nitride single crystals were grown on sapphire substrates by metalorganic chemical vapor deposition. Better crystallinity with fine ridgelike facets is obtained on the sapphire. Also lower carrier concentration and higher mobilities indicate both lower nitrogen vacancies and less oxygen incorporation on the sapphire. The results of this study show better physical properties of GaN thin films achieved on sapphire.

GaN layers are grown on C-, A-, R- and M-plane sapphire substrates by gas source molecular beam epitaxy (MBE). The c-axis of GaN is perpendicular to the surface plane and photoluminescence spectra exhibit strong and sharp (full width at half maximum≤39 meV at 77 K) excitonic emission without deep level emission for all cases. GaN layers grown on silica glass substrates also have the c-axis perpendicular to the surface, although they are poly-crystalline. They exhibit an n-type conduction with an electron concentration of 7×10-16 cm-3 and a mobility of 23 cm2/V·s. They also exhibit strong photoluminescence comparable to that of GaN grown on sapphire substrates, although showing a wide spectral half width (245 meV at 77 K). GaN layers grown on glass substrate is considered promising for fabrication of large area and low cost light emitting devices and solar cells.


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