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One-step Lateral Growth for Reduction in Defect Density of A-Plane GaN on R-Sapphire Substrate And R-Sapphire Substrate Application in Light Emitters

Low defect density a -plane GaN films were successfully grown by sidewall epitaxial lateral overgrowth (SELO) technology. Using this technology, a -plane GaN films with atomically flat surface were grown. The threading dislocation and stacking fault densities in the overgrown regions were lower than 106 cm⁻² and 103 cm⁻¹, respectively. We also fabricated and characterized a -plane-GaN-based LEDs using SELO technology. The light output power of a blue-green LED was shown to monotonically increase with decreasing of threading dislocation density.

Green GaInN/GaN quantum well light-emitting diode (LED) wafers were grown on nanopatterned c-plane sapphire substrate by metal-organic vapor phase epitaxy. Without roughening the chip surface, such LEDs show triple the light output over structures on planar sapphire. By quantitative analysis the enhancement was attributed to both, enhanced generation efficiency and extraction. The spectral interference and emission patterns reveal a 58% enhanced light extraction while photoluminescence reveals a doubling of the internal quantum efficiency. The latter was attributed to a 44% lower threading dislocation density as observed in transmission electron microscopy. The partial light output power measured from the sapphire side of the unencapsulated nanopatterned substrate LED die reaches 5.2 mW at 525 nm at 100 mA compared to 1.8 mW in the reference LED.


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