Flat GaN Thin Film on Precisely Offset-Controlled Sapphire Substrate
- Details
- Category: Molybdenum & Sapphire Growth Furnace News
- Published on 27 January 2014
- Written by Cloudy
- Hits: 241
A high-quality thin GaN layer with an atomically flat surface has been successfully grown on a precisely offset-
angle-controlled sapphire substrate by metal-organic vapor phase epitaxy. The insertion of an AlGaN layer between the underlying AlN layer and the GaN layer was found to improve the crystalline quality of the upper GaN layer.
InGaN films have usually been grown on GaN epitaxial layers but it is difficult to grow the thick InGaN films on GaN because of strong stress induced by large lattice mismatch between InGaN and GaN. The thick InGaN films grown on GaN have poor surface morphologies.It is described that the growth of thick InGaN films of a few microns thickness has successfully been achieved directly on sapphire substrates using AlN buffer layers. On AlN buffer layers homogeneous InGaN with 2.5 μm thickness and large indium mole fraction of 0.2 could be grown.
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