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Optical Degradation of InGaN/AlGaN Light‐Emitting Diode on Sapphire Substrate Grown by Metalorganic Chemical Vapor Deposition

We report an optical degradation of an InGaN/AlGaN double‐heterostructure light‐emitting diode (LED) on a sapphire substrate grown by metalorgonic chemical vapor deposition. Electroluminescence, electron‐beam induced current, and cathodoluminescence observations have shown that the degraded InGaN/AlGaN LED exhibits formation and propagation of dark spots and a crescent‐shaped dark patch, which act as nonradiative recombination centers. The values of degradation rate under injected current density of 0.1 kA/cm2 were determined to be 1.1×10-3, 1.9×10-3, and 3.9×10-3h-1 at ambient temperatures of 30, 50, and 80°C, respectively. The activation energy of degradation was also determined to be 0.23 eV.

InGaN multi-quantum-well (MQW)-structure laser diodes (LDs) fabricated from III–V nitride materials were grown by metalorganic chemical vapor deposition on sapphire substrate with orientation (A face). The mirror facet for a laser cavity was formed by cleaving the substrate along the orientation (R-face). As an active layer, the InGaN MQW structure was used. The InGaN MQW LDs showed a sharp peak of light output at 415.6 nm that had a full width at half-maximum of 0.05 nm under pulsed current injection of 1.17 A at room temperature. The laser threshold current density was 9.6 kA/cm².


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