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Super-Junction LDMOST on A Silicon-on-Sapphire Substrate

A super-junction lateral double diffused MOST (SJ-LDMOST) in silicon-on-sapphire technology, targeting power integrated circuits (PICs), is proposed, implemented and characterized. The proposed structure eliminates "substrate-assisted-depletion" effects in lateral SJ devices thus achieving charge compensation between the n and p SJ-pillars as well as a uniform electric field distribution in the drift region in the off-state. Three-dimensional (3-D) simulations of the device, using realistic aspect ratios for the SJ-pillars, indicate that a significant reduction in specific on-resistance for a given breakdown voltage can be achieved as compared to conventional reduced surface field (RESURF) devices. Experimental devices were implemented using a seven mask CMOS compatible process. Fabricated SJ-LDMOSTs with a drift region length of 66 μm and a pillar aspect ratio of 1.2 μm/0.7 μm (width/height) exhibit a specific on-resistance of 0.82 Ω.cm2 and a breakdown voltage (BV) ranging between 500 and 600 V corresponding to less than 8.5% charge imbalance in the pillars.

Interfacial energies and contact angles for liquid Cu-sapphire and liquid Ag-sapphire systems as a function of O2 partial pressure were experimentally determined using the sessile drop technique. For very low values of Po2the variation of γlg is small, but at PO2, values high enough to establish a monolayer on the liquid metal, γlg decreases linearly with increasing logPO2. The slope of this line is related to the surface concentration of oxygen through Gibb's absorption equation. For various metal-sapphire systems, γlg is found to be a cosine function of the contact angle (θ) whereas γsl seems to be a linear function of (θ). A theoretical model has been developed to predict this behavior. One empirical constant relating to the free energy of formation of an interfacial compound was employed. The validity of the model has been tested for the Cu, Ag, Fe, and Ni-sapphire systems. The model has also been used to predict the effect ofP o2on the interfacial energies and contact angle for the Co-sapphire system.


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