Analysis of The Growth Conditions of Long Single Crystalline Basal-Plane-Faceted Sapphire Ribbons by The Stepanov/EFG Technique
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- Category: Molybdenum & Sapphire Growth Furnace News
- Published on 09 January 2014
- Written by Cloudy
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The influence of the growth conditions and process parameters on the formation of blocks during growth of 
basal-plane-faceted single crystalline sapphire ribbons by the Stepanov/EFG technique was investigated. A number of modifications of the crystallization unit were used to vary systematically the crystal growth conditions. The results gave clearly the growth conditions which are favorable to get blocks-free single crystalline basal-plane-faceted sapphire ribbons.
Quite often sapphire crystals contain specific defects called bubbles of average diameter higher than 100 μm or microbubbles of diameter smaller than 10 μm. These defects strongly affect the crystal properties. Bubbles of 100 μm in diameter have been observed in the molten zone during micropulling-down of sapphire fibers. Before their incorporation inside the crystal, they show a periodic oscillation and consequently deform the crystallization interface. These observations are discussed with reference to the available literature.
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