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Controlled Growth And Surface Morphology Evolution of M-Oriented GaN Faceted-Domains on SiO2-Patterned M-Plane Sapphire Substrates

M-oriented GaN faceted-domains were grown on SiO2-patterned m-plane sapphire substrates with no low-temperature-grown buffer layers, and their surface morphology evolution was investigated. The preferred crystallographic orientations of GaN domains are found to be sensitively influenced by substrate temperature. The growth rate of m-oriented GaN faceted-domains along the c-direction is found to be significantly suppressed after filling up the circular-shaped window regions. Our simple model calculation reveals that this can be explained by the minimization of surface energy increment per volume increment, and that the growth along the c-direction is energetically not favored until the domain reaches a critical size.

GaN films were prepared by hot wall epitaxy on sapphire substrates from Ga and NH3 sources. Growth characteristics of the GaN films were investigated from reflection high energy electron diffraction (RHEED) and x‐ray diffraction measurements, and effects of initial layers on the film growth are discussed. High quality films with streak RHEED patterns were obtained when the films were grown on a GaN initial layer prepared by Ga predeposition and its nitridation on surface nitrided sapphire substrates.


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