Growth of Heteroepitaxial ZnO Thin Film And ZnO/(Mg,Zn)O Nanomultilayer by Off-Axis Magnetron Sputtering

 
 

Heteroepitaxial ZnO thin film was deposited on a sapphire substrate using off-axis radio-frequency magnetron sapphire substratesputtering. The crystallinity of the ZnOthin film was affected by deposition pressure, substrate temperature, and postannealing temperature. The low-temperature photoluminescence of heteroepitaxial ZnO thin filmgrown under optimum conditions of 650°C, 120W, and 10mTorr showed strong UV emission at 3.36eV with a full width at half maximum (FWHM) of 16.0meV. After annealing in an O2 ambient at 950°C, the high-resolution x-ray diffraction rocking curve FWHM of the ZnOthin film markedly decreased from 0.38° to 0.19° although UV emission decreased. These results indicated that a heteroepitaxial ZnO thin film with strong UV emission can be grown by off-axis rf sputtering and that O2 annealing helps enhance the crystallinity of ZnO thin film which can be used as a buffer layer in ZnO/(Mg,Zn)O multiple quantum well structures. To demonstrate an application of the ZnO thin film, a ZnO/(Mg,Zn) nanomultilayer was grown on a ZnO-buffered sapphire substrate and its optical properties were measured.

Thin films of ZnO were grown on a sapphire substrate by atmospheric pressure halide vapor phase epitaxy. A double-crystal X-ray diffraction study showed a minimum full width at half maximum of the hexagonal ZnO line after 1212 s for the film deposited at 1023 K. The room-temperature photoluminescence spectrum displays an ultraviolet emission at 381.0 nm due to the recombination of free excitons.


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