Preparation of InN Epitaxial Layers in InCl3[BOND]NH3 System
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- Category: Molybdenum & Sapphire Growth Furnace News
- Published on 30 December 2013
- Written by Cloudy
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The epitaxial growth of InN by the open tube flow method using the interaction of InCl3 and NH3 is discussed. 
The influence of various technological parameters on the process and structure perfection of the epitaxial layers, grown on the single crystal-oriented sapphire substrates is considered. The main kinetic dependences of the process are plotted and discussed.InN epitaxial layers were mosaic and n-type with electron concentration 2 · 1020–8 · 1021 cm−3 and mobilities 50-35 cm2/V · s, respectively.
Recent results suggests that Formula may be a p‐type transparent conductor, but thin film synthesis is difficult because of the complex Formula phase diagram. We report a robust method of making c‐axis oriented Formula thin films. Thin film precursors of Formula were deposited on sapphire substrates by radio‐frequency sputtering and by pulsed‐laser deposition. Subsequent annealing in air at Formula in a closed crucible containing Formula and Formula powders yielded nearly phase‐pure, biaxially textured Formula . The film were p‐type and transparent with a gap of Formula .
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