Effects of Sapphire Substrate Annealing on ZnO Epitaxial Films Grown by MOCVD
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- Category: Molybdenum & Sapphire Growth Furnace News
- Published on 27 December 2013
- Written by Cloudy
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The annealing effects of sapphire substrate on the quality of epitaxial ZnO films grown by metalorganic 
chemical vapor deposition (MOCVD) were studied. The atomic steps formed on sapphire (α-Al2O3) substrate surface by annealing at high temperature was analyzed by atomic force microscopy (AFM). The annealing effects of sapphire substrate on the ZnO films were examined by X-ray diffraction (XRD), AFM and photoluminescence (PL) measurements. Experimental results indicate that the film quality is strongly affected by annealing treatment of the sapphire substrate surface. The optimum annealing temperature of sapphire substrates is given.
A very thin ZnO sputtered layer is newly introduced as an intermediate layer to obtain a smooth surface of ZnO film epitaxially grown on a sapphire substrate by the CVD method. By a ZnO–H2–H2O–O2 CVD system, a ZnO film is grown on a sapphire substrate, while a ZnO film is grown on a sapphire substrate. The surfaces of as-grown ZnO films are so smooth that a light beam can easily couple and propagate into a waveguide of the ZnO film.
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