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Growth And Characterization of CeO2 Films on Sapphire Substrates by Sputtering Process

Two-inch-diameter CeO2 films on R-plane sapphire substrates have been prepared using an on-axis rf magnetron sputtering method. The effects of postannealing treatment, sputtering gas pressure and substrate temperature on the orientation, crystallinity and surface morphology of the CeO2 films have been investigated. The preferred CeO2 films with high crystallinity are grown at 820° C and 0.15 Torr and have a full width at half-maximum value of the rocking curve of planes of 0.15°. The spatial variation of thickness of the CeO2 films across the 2-inch substrate is about 5.8%. The c-axis oriented YBa2Cu3O x (YBCO) films grown on sapphire substrates with a (100)-preferred CeO2 buffer layer of 100 nm are made. The YBCO films have superconducting properties with the T c being 88–90 K and J c (77 K, 0 T) being (1–3)×106 A/cm².

Epitaxial CeO2 films were grown on r-cut sapphire by molecular beam epitaxy. The CeO2 films grown on as supplied r-Al2O3 substrate constituted of oriented CeO2 films. We have found that annealing of r-Al2O3 substrates at 1050 °C for 10 h dramatically enhances the epitaxial growth of oriented CeO2 films on r-Al2O3 substrate. The use of RF activated oxygen source for oxidation during growth further enhances the growth of oriented CeO2 films on r-Al2O3. High quality epitaxial oriented CeO2 films can be grown on annealed r-Al2O3 substrates by employing lower deposition rate (<1 Å/s) and substrate temperatures above 650 °C either from Ce metal or CeO2 ceramic sources. The CeO2 films were characterized by 2θ–θ, ω-scan and φ-scan measurements. The CeO2 films grown on annealed r-Al2O3 substrates showed high crystallinity with rocking curve width of 0.07° for reflection of CeO2 and had excellent in-plane epitaxy. These CeO2 films can be used as buffer layers for the growth of high quality high temperature superconductor films on sapphire substrates.


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