High-Strength Edge-Bonded Sapphire Windows

High-quality epitaxial ZnO layers grown on facet-controlled epitaxial lateral overgrown (FACELO) GaN/sapphire sapphire window filmtemplates were achieved by an evaporation−physical transport−condensation method. The ZnO/FACELO GaN heterostructures showed a substantial improvement in the crystalline quality with a lower defect density and excellent photoluminescence emission. The effects of the growth temperature and oxygen flow rate on the morphology of ZnO were systematically studied. The determining factors for the formation of different morphologies were found to be gas-phase supersaturation and the surface energy of the growing planes. In addition, the lattice matching between the ZnO and GaN leads to the improvement of the electric and optical properties. With such kind of perfect ZnO/GaN heterostructure interfaces obtained on the semipolar surface, the new opportunities for the fabrication of hybrid ZnO/GaN optoelectronic devices on sapphire are proposed.

High strength edge bonds have been achieved between individual sapphire components, showing promise for fabricating window blanks up to 600 mm diameter or larger in size. Several bonding methods were investigated, with a directed-energy diffusion-bonding method yielding components with bond fracture strengths of 200 MPa. Bonded sapphire components 600 mm long and 3 mm thick with a 75 mm wide bond line have been produced. When polished, the bonded windows show no degradation in transmittance or transmitted wavefront quality. Process scale up to larger bonds lines is planned. Mechanical and optical characterizations of sub- scale edge-bonded sapphire windows are presented.


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