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Selective Growth of ZnO Nanorod Arrays on A GaN/Sapphire Substrate Using A Proton Beam Written Mask

Hydrothermal growth method of GaN grown on the use of zinc oxide nanorods array controlled manner / sapphire substrate. Proton beam writing (PBW), and has write-dimensional lithography, a pattern for the polymethyl methacrylate (PMMA) was spin-coated to mask GaN substrate. Zinc oxide, having a wurtzite crystal structure the same and a low of about 1.9% lattice mismatch with GaN, genic and exposed positions where the growth of gallium nitride vertical rods. Structural and optical properties of ZnO nanorods by X-ray diffraction (XRD) and microphotoluminescence spectroscopy (μ-PL) conducted a further study. ZnO nanorods annealed in nitrogen at 380 nm wavelength significantly improves the ultraviolet (UV) light emission, and successfully dropped significantly, yellow and green-band emissions. These results show that the new device ZnO nanostructures potential applications.

As well as vertically oriented ZnO nanowires (NWS) grown in c-plane sapphire using Au film as a catalyst for vapor transport process. This new discovery was unexpected due to the fact that the zinc oxide crystal lattice between the underlying substrate and the mismatch of 18%. X-ray diffraction (XRD) analysis showed that the single crystal growth of wurtzite nanowires in a direction perpendicular to the plane of the sapphire substrate, which proved a vertical plane sapphire is the growth of ZnO nanowires are not necessary for, as has been as before The We have found that by controlling the film Au-Au / sapphire substrate with a pre-grown nanowire thickness of the heat treatment may be grown or inclined or vertical. The thickness of the Au film is 1 ~ 10nm atomic force microscope (AFM) and scanning electron microscopy (SEM) studies showed that in the absence of the film annealed nanowires can be grown from the surface normal 32 ° inclination, which leads to a pre-annealed thin gold film direction of the surface normal to the growth of nanowires. We believe that the sapphire surface concentration of aluminum ions and O is formed in the normal direction and the inclined growth.


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