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Growth of Thin Protective AlN Layers on Sapphire Substrates at 1065 °C for Hydride Vapor Phase Epitaxy of AlN above 1300 °C

A thin protective AlN layer was grown on a sapphire substrate at 1065 °C for main AlN layer growth at high temperature (> 1300 °C) by hydride vapor phase epitaxy (HVPE). The formation of surface pits on the surface of the epitaxial AlN layer, grown directly on the sapphire substrate at 1320 °C, could be prevented by growing the protective layer. The full-width at half-maximum (FWHM) of X-ray diffraction (XRD) rocking curves of asymmetric (10 equation image 0) and symmetric (0002) AlN decreased to 19.8 and 9.6 min, respectively. The concentration of oxygen impurities in the layer grown at 1320 °C was also reduced from 3 × 1019 to 4 × 1018 cm−3 by protecting sapphire substrate at 1065 °C.

Epitaxial thin films of Al-doped zinc oxide have been grown on sapphire substrates by pulsed laser ablation. The effect of substrate temperature, background pressure of oxygen, and substrate orientation (A, M, R, C) on the orientation relationships between ZnO and sapphire have been evaluated using on- and off-axis X-ray diffractometry. Under all growth conditions zinc oxide, on A- and C-plane sapphire, grew with the c-axis perpendicular to the substrate. In contrast, on M and R orientations of sapphire, ZnO grew with its c-axis parallel or perpendicular to the substrate depending on the substrate temperature and background pressure employed during growth. In all cases only one unique in-plane relationship between the sapphire substrate and the zinc oxide film was found with the exception of the M-plane at high substrate temperatures.


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