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Improvements on The Electrical and Luminescent Properties of reactive molecular beam epitaxially grown GaN Films by Using AlN‐Coated Sapphire Substrates

The electrical and luminescent properties of the GaN epitaxial films grown on AlN‐coated sapphire by reactive molecular beam epitaxy have been studied. The GaN films on AlN epitaxial films have larger Hall mobilities and show more intense cathodoluminescence peaks at a wavelength of 360 nm than those of the GaN films grown directly on sapphire, which suggests that the crystal qualities of GaN films are improved by use of AlN‐coated sapphire as substrates. The lattice matching and small difference of the thermal expansion coefficients between GaN and AlN are considered to result in the improvements.

A chemical vapor deposition system for the growth of epitaxial (112¯0) ZnO films on (011¯2) sapphire, employing the reaction of zinc vapor and carbon dioxide, was investigated. Growth rates as high as 30 μm/h at a substrate temperature of 700‐750 °C were achieved. Films grown on substrates with thin presputtered layers exhibited smooth surfaces and improved crystal perfection as determined by SEM, reflection electron diffraction, and acoustic evaluation. Films had high resistivity which eventually degraded on exposure to atmosphere. Surface acoustic wave interdigital transducers were fabricated on lithium‐diffused films, and the electromechanical coupling coefficient of 1.39% was measured for a film thickness to wavelength ratio of 0.13.


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