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Long Crystal Sapphire Substrate Requirements

Present due to increased investment and competition from the silicon substrate , a sapphire substrate manufacturers need to further reduce production costs. LED chip manufacturers for lower costs considerations will gradually tend to use large-size substrate , a silicon substrate in large size has obvious advantages , therefore , the sapphire substrate want to compete and win in the market must meet the LED on size requirements, while lower production costs. Because the reasons for lattice matching , LED GaN film core material most suitable in the C -plane sapphire substrate epitaxial growth , but the C-axis crystal growth than the A -axis crystal growth more difficult , so far more than the traditional method of using Sapphire Dan Changjing A axis crystal growth , but the A axis length crystal ingot grown need to dig from the side bar to get to the sapphire crystal rod C and then processed into C to the sapphire substrate , so it will greatly reduce the ingot material utilization, such as Kyropoulos , its material utilization at about 35% , the use of C-axis crystal growth material utilization can be increased to 80% , thereby greatly reducing the cost of production sapphire ; addition , the use of A-axis growth methods substrate parts grow at different times, so uniformity over poor, and the C-axis crystal growth method using the same time to generate a substrate , high uniformity , shown in Figure 1 ; while the C -axis length of crystal grain than the axial length a can more easily obtain large size C of the sapphire substrate .

Sapphire Dan Changjing The crucible is an important part of the cost of the crucible can be reused to reduce costs . Increase the degree of automation and the crystal growth furnace ingot yield , growth of large-size ingots , reducing long sapphire crystal time but also reduce the cost of production of important ways.


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