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Advanced Thermal Control Crystal Growth Method Analysis

Sapphire industry benefited from the rapid development of LED industry demand, the current investment Sapphire Dan Changjing numerous vendors , and LED applications has slowed , sapphire flat substrates have an oversupply , prices from 2010 up to $ 30 drop to the current 8 to $ 9 .

Sapphire industry benefited from the rapid development of LED industry demand, the current investment Sapphire Dan Changjing numerous vendors , and LED applications has slowed down , flat sapphire substrates have an oversupply , the price of the highest from 2010 to the current $ 30 8 to $ 9 . While the sapphire substrate is also facing competition in a silicon substrate , Toshiba and Bridgelux (Bridgelux) cooperation silicon substrate LED chip is expected to be mass production in October this year , since the silicon substrate lower cost and easy access to large-size , once the silicon substrate LED yield and performance achieved with LED sapphire substrate comparable extent , the sapphire substrate will face more severe challenges .

Currently LED Sapphire Dan Changjing methods include using Czochralski method, heat exchange, Kyropoulos , vertical and horizontal gradient crystallization (VHGF) and advanced thermal control method . Kyocera Corporation of Japan , Taiwan, Sino-American Silicon Products Co., Ltd., Chongqing quadruple Sapphire Limited have achieved a 4-inch sapphire Czochralski method , but it is more difficult to obtain a larger size , crystal growth time is short , and C to growth is its main advantage; heat exchange method developed by Crystal System of the original in the growth of large-size sapphire has a strong advantage , but low yield ( 45% ) , one molybdenum crucible also increases the production costs, while grown sapphire pink, affect the LED light transmittance ; Kyropoulos is currently the most widely used method , this method can grow large size ingots , long grain short time, but with the ingot size increases , the yield but also with the reduced. STC Korea adoption VHGF France , A to C and then grown rectangular sapphire rod to dig , currently only done 6 inches , because this method requires more special thermal field , thermal field design is growing larger sapphire bottleneck.


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