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Micromachining of Sapphire Wafers for LED Production Using Picosecond Lasers

High intensity, blue light emitting diodes (LEDs) are finding use in a rapidly growing range of applications, including display backlights for handheld devices and flat panel televisions, automotive headlamps and general lighting applications. To support further market growth, LED manufacturers are working to improve device output efficiency and to lower production costs. One particular focus of these efforts is in the area of singulation, that is, the process of dicing a wafer containing many LEDs into individual devices. Traditionally, this has been accomplished using either mechanical means or laser ablation based Q-switched, diode-pumped,solid-state (DPSS) lasers.

However, both these approaches have limitations, especially for high brightness, high value LEDs. Now, the development of industrial lasers with ultrafast (picosecond) pulsewidths is enabling a new type of singulation by creating internal modifications that subsequently allow the substrate to be separated. While patents have been granted for internal modification to several companies,  In addition,a cost effective, high reliability picosecond laser source, called the Talisker, which is well suited for this next-generation internal modification dicing application.


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