Sapphire Wafer Substrates Made of Molybdenum And MoCu
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- Category: Molybdenum & Sapphire Growth Furnace News
- Published on 24 February 2014
- Written by Cloudy
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The semiconductor layers in LED chips convert electrical current into light. They consist of an area of excess 
electrons (n-doped) and an area in which there is a shortage of electrons (p-doped). When current is applied to the semiconductor layers, the electron distribution balances out. They radiate light in the form of photons. The remaining energy is emitted as heat at temperatures of up to 85 °C.
In the future LEDs will shine even brighter. And the operating temperatures will rise. With molybdenum wafer substrates, for example for use in sapphire- or silicon-based (Si) LED chips and the MoCu composites that we have developed specially for use in sapphire-based LED chips, PLANSEE has the optimum material for heat dissipation in its range.
Wafer substrates are bonded to the semiconductor layers of LED chips at temperatures of up to 800 °C. R670, the MoCu material specially developed by us for sapphire-based LEDs, is tailored for the soldering process as well as for long-term heat dissipation in LED chips. R670 has the same coefficient of thermal expansion (CTE = 6.7 ppm/K) as Al2O3. Al2O3 is the base material for both the sapphire wafer and the ceramic carrier plate in the LED chip. The uniform thermal expansion of MoCu wafer, sapphire substrate and ceramic base plate prevents defects in the semiconductor and solder layers.
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