Synthetic Sapphire
- Details
- Category: Molybdenum & Sapphire Growth Furnace News
- Published on 17 February 2014
- Written by Cloudy
- Hits: 307
Synthetic sapphire is a hard, chemically inert, monoaxial crystal material which has excellent optical properties, 
and thermal stability to 1600ºC and a melting point of about 2045ºC, and has one of highest hardness of all materials, after diamond and silicon carbide (SiC).
In 1902 a French chemist Auguste Verneuil developed the first practical method for producing synthetic sapphire crystals. The Verneuil process, named for him, is still in use today, but the majority of sapphire used for sapphire wafer substrates today are grown using newer growing methods including:
Czochralski process - "CZ" - (since 1916)
Kyropoulos method - "KY" - (since ~1926)
Float Zone Technique - "FZ" - (since ~1926)
Heat Exchange Method - "HEM" - (~ 1970)
Horizontal Bridgeman Technique - "HBT" - (~ 1975)
EFG Tequnique - (since 1976)
CHES - (Controlled Heat Extraction System ~2007)
Advanced sapphire furnaces (ASF) - GT Tech.
After growing, Sapphire crystals must be cut (or core-drilled and sliced) into the correct crystal angle. Typically LED Sapphire Wafer Substrates are made using C-plane sapphire. Other applications {and experimentation for lower cost} is being done with A-plane or R-plane wafers.
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