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The Mechanism of Formation of Light-Scattering Centers in Sapphire Crystals Grown in Gas Atmospheres

The mechanism of the formation of light-scattering centers in sapphire crystals grown by horizontal directed crystallization in gas atmospheres reducing with respect to the Al2O3 melt was studied. The experimental regularities here significantly differ from those observed upon formation of other conventional defects in sapphire crystals (vacancy pores, gas bubbles, and so on). It is shown that the known formation mechanisms of macroscopic ≥1 mm) inclusions in crystals are not acceptable in this case. Using the model of bulk crystallization is proposed to describe the obtained regularities.

Synthetic Sapphire is a single crystal form of corundum, Al2O3, also known as alpha-alumina, alumina, and single crystal Al2O3. Sapphire is aluminium oxide in the purest form with no porosity or grain boundaries, making it theoretically dense. The combination of favourable chemical, electrical, mechanical, optical, surface, thermal, and durability properties make sapphire a preferred material for high performance system and component designs. For various semiconductor applications, sapphire is the best choice in comparison with other synthetic single-crystals.


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