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Metalorganic Vapor Phase Epitaxy of Thick InGaN on Sapphire Substrate

Growth of thick InGaN films was performed on single crystal films of GaN or AlGaN and buffer layers of AlN, GaN or AlGaN by metalorganic vapor phase epitaxy (MOVPE). In the growth of InGaN on GaN or AlGaN films, smooth InGaN films with small indium mole fractions were grown in the initial growth stage caused by strong stress due to lattice mismatch. However, with an increase in thickness of the InGaN film surface became rough due to the generation of InGaN grains with large indium mole fractions. Smooth and thick (∼2 µ m) InGaN films with large indium mole fractions were grown on AlN, GaN or AlGaN buffer layers.

High-efficiency light-emitting diodes emitting amber, green, blue, and ultraviolet light have been obtained through the use of an InGaN active layer instead of a GaN active layer. The localized energy states caused by In composition fluctuation in the InGaN active layer are related to the high efficiency of the InGaN-based emitting devices. The blue and green InGaN quantum-well structure light-emitting diodes with luminous efficiencies of 5 and 30 lumens per watt, respectively, can be made despite the large number of threading dislocations (1 × 108 to 1 × 1012 cm−2). Epitaxially laterally overgrown GaN on sapphire reduces the number of threading dislocations originating from the interface of the GaN epilayer with the sapphire substrate. InGaN multi-quantum-well structure laser diodes formed on the GaN layer above the SiO2 mask area can have a lifetime of more than 10,000 hours. Dislocations increase the threshold current density of the laser diodes.


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