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Control of Growth Orientation And Shape for Epitaxially Grown In2O3 Nanowires on A-Plane Sapphire

Vertically aligned indium oxide nanowires were grown on a-plane sapphire substrate by the method of catalyst-assisted carbothermal reduction. The morphology and crystal structure of the nanowires are determined by X-ray diffraction, transmission electron microscopy and field-emission scanning electron microscopy. Two types of In2O3 nanowires were found by controlling the growth conditions. The nanowires with a hexagonal cross-section were shown to grow indirection, whereas those with a square cross-section grow in [0 0 1] direction. In addition to the temperature effects, the concept of supersaturation in Au catalyst is proposed to explain the formation of these two types of nanowires. Besides, tapering, which is explained with the interplay between the vapor–liquid–solid and vapor–solid growth mechanisms, is observed in the nanowires.

It was demonstrated  the solid‐phase epitaxial crystallization of thin films of lithium tantalate deposited on lithium niobate and sapphire substrates. An organometallic compound, formed by reaction of lithium dipivaloylmethanate and tantalum(V) ethoxide, is used as a single‐source precursor for the deposition of amorphous thin films of lithium tantalate using a spray‐metalorganic chemical vapor deposition process. Annealing of the amorphous films results in their epitaxial alignment with respect to the underlying LiNbO3 or Al2O3 substrates. X‐ray diffraction, ion channeling, and scanning electron microscopy are used to evaluate and compare the crystalline quality of the films produced by this solid‐phase epitaxial process to films that are crystalline as deposited.


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