One-Dimensional β–Ga2O3 Nanostructures on Sapphire:Low-Temperature Epitaxial Nanowires And High-Temperature Nanorod Bundles
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- Category: Molybdenum & Sapphire Growth Furnace News
- Published on 20 December 2013
- Written by Cloudy
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We present details on the fabrication of the chloride vapor-phase epitaxy (Cl-VPE) system for the growth of 
gallium nitride (GaN). Growth of GaN on sapphire substrates has been carried out at different growth temperatures while keeping the flow rate of the carrier gas as a constant. The crystalline and optical qualities of GaN grown layers by Cl-VPE were evaluated as a function of the growth temperature. An X-ray diffractometer and Raman scattering studies are used to determine the structural properties of the film. The optical properties are evaluated using a UV-absorption spectrometer and photoluminescence studies at room temperature. The quality of the films grown at different temperatures is compared. The optimum conditions to realize good crystal structure and smoother surface morphology have been obtained and reported.
Well-aligned Ga2O3 nanowires were formed on the sapphire substrates at temperatures of 650–450 °C using a single precursor of gallium acetylacetonate via a vapor-liquid-solid (VLS) method. Structural analyses reveal that the well-aligned Ga2O3 nanowires are expitaxially grown on the sapphire with Ga2O3/ sapphire orientational relationship. In addition, formation of the flowerlike Ga2O3 nanorod bundles at a temperature of 750 °C via the vapor-solid (VS) mechanism was also demonstrated. Instead of being catalysts in the VLS method, the Au nanoparticles are proposed to play a role in sinking the Ga vapor for forming the nuclei of Ga2O3 nanorods in the VS method.
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