Growth Modes in Metal-Organic Molecular Beam Epitaxy of TiO2 on R-Plane Sapphire
- Details
- Category: Molybdenum & Sapphire Growth Furnace News
- Published on 12 December 2013
- Written by Cloudy
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Phase pure, epitaxial rutile TiO2 films were grown on sapphire substrates at temperatures between 485 and 
725 °C using metal-organic molecular beam epitaxy with titanium tetraisopropoxide as the Ti source. Growth modes and rates were investigated as a function of substrate temperature using reflection high-energy electron diffraction, x-ray reflectivity, atomic force microscopy, and transmission electron microscopy. Growth rates were as high as 125 nm/h. The influence of additional oxygen supplied from a rf plasma source was investigated. Without oxygen plasma, the growth rate exhibited reaction and flux-limited regimes and layer-by-layer growth was observed in the initial stages of film growth. With oxygen plasma the growth rate became independent of temperature; films grew initially in step-flow mode and were insulating. The mechanisms for the different growth modes as a function of film thickness, temperature, and presence of oxygen are discussed.
In this report, we show controlled in-situ doping of a single crystalline metal oxide nanowire, using indium-doped tin oxide (In−SnO2) as an example, during a heteroepitaxial growth process. Highly regular and high-density arrays of In−SnO2 nanowires, which demonstrate three- and four-fold growth symmetry, are obtained directly on optical sapphire substrates. Similar synthesis strategies, involving careful selection of desired growth conditions and smart manipulation of favorable thermodynamic properties, could be extended to production of various doped metal oxide nanowires.
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