Epitaxial Growth of A Single Crystal Layer to The Liquid Phase from The Orientation of The Sapphire Substrate Is Shown As The Three Conditions Required
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- Category: Molybdenum & Sapphire Growth Furnace News
- Published on 04 December 2013
- Written by Cloudy
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The growth of single‐crystal epitaxial layers of Formula onto (0001) oriented sapphire substrates from the 
liquid phase is shown to require three conditions:
1.The partial pressure of Formula in the H2 ambient, Formula greater than the equilibrium pressure.
2.The growth melt positioned in a thermal gradient to transport the dissolved Formula to the growth interface.
3The control of nucleation by the addition of Bi to the growth melt.
Studies of growth at temperatures from 850° to 1050°C show that the layer thickness, Formula , is approximately linear in time and varies with growth temperature and atom fraction of Ga, Formula in the growth melt. When Formula , internal cracks in the Formula basal plane hexagonal directions develop at the layer‐substrate interface and for Formula they propagate to the surface and are thermally etched. A description is given of the interaction of liquid Ga with Formula as a function of Formula and Formula . The low solubility of Formula in Ga (Formula fraction at 1150°C) prevents useful growth by slow cooling of the melt. The inability to change the electron concentration, Formula , with Zn doping and the decrease of Formula with Formula in the growth melt support but do not unambiguously confirm the model that the native donor is a nitrogen vacancy.
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