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Chemical Vapor Deposition of Single-Wall Carbon Nanotubes on Iron-Film-Coated Sapphire Substrates

We report on chemical vapor deposition (CVD) of single-wall carbon nanotubes (SWNTs) on sapphire substrates coated with thin Fe films. The dependence of the SWNTs growth on orientation of the crystallographic face of the sapphire substrate, i.e., defined as A-, R-, and C-faces, was investigated. It was found when the CVD was performed at 800 °C, the largest quantity of SWNTs was produced on the A-face substrate, followed by the R- and C-face substrates. This result implies that the SWNT growth can be controlled by choosing the orientation of the sapphire substrates.

Growth of A1N on patterned sapphire substrates was studied,deep grooves were made on sapphire substrates by a laser-induced backside wet etching technique. KrF excimer laser was irradiated at an interface between sapphire and phenolphthalein/N-methyl-2-pyrrolidone solution, which acts as a super-heating liquid. An etch rate of sapphire was as high as 6 μm/min for laser power of 1.0 J/cm2. The A1N layer was grown on the patterned sapphire substrate by chemical vapor reaction process at 1190 °C for 1 h. On the inclined sidewall of the etched grooves, A1N grew with its c-axis perpendicular to the sidewall. This produced m-plane surfaces which were inclined around 20° to the basal plane of sapphire. A threading dislocation density of m-plane A1N domains was 8×108 cm−2.


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