Optical Properties of Highly Ordered AlN Nanowire Arrays Grown on Sapphire Substrate
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- Category: Molybdenum & Sapphire Growth Furnace News
- Published on 28 November 2013
- Written by Cloudy
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Two techniques are described by which single crystals of sapphire may be grown. One is a development of the 
vertical-pulling technique for the production of scatter-free, lowdislocation-density material, whilst the other is an extension of a floating-zone, recrystallisation technique previously used for calcium tungstate. The origin and control of defects in crystals grown by these techniques are discussed.
Highly ordered AlN nanowire arrays were synthesized via a simple physical vapor deposition method on sapphire substrate. The nanowires have an extremely sharp tip ≪10 nm, with the average length around 3 μm. Raman spectroscopy analysis on the AlN nanowire arrays revealed that the lifetime of the phonons is shorter than that in bulk AlN. The transmission spectra of the AlN nanowires showed a blueshift ∼0.27 eV at the absorption edge with that of the bulk AlN, which is closely related to the small size of the nanowires.
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